Evidence of Longitudinal Acoustic Phonon Generation in Si Doping Superlattices by Ge Prism-Coupled THz Laser Radiation

Authors

Thomas E. Wilson, Marshall UniversityFollow
Konstantin Korolev, Marshall UniversityFollow
Erich Kasper
MIchael Oehme
Jörg Schulze

Document Type

Article

Publication Date

2014

Abstract

We report on the direct excitation of 246 GHz longitudinal acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation of the same frequency. A longitudinally polarized evanescent laser light field is coupled to the superlattice through a germanium prism providing total internal reflection at the superlattice interface. The ballistic phonon signal is detected by a superconducting aluminum bolometer. The sample is immersed in low-temperature liquid helium.

Comments

The version of record is available from the publisher at http://iopscience.iop.org/1757-899X. This article is published with a Creative Commons Attribution 3.0 Licence. Copyright 2014 the Authors. doi:10.1088/1757-899X/68/1/012008. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

Recommended Citation

Wilson T E, Kasper E, Oehme M, Schulze J, Korolev K, "Evidence of Longitudinal Acoustic Phonon Generation in Si Doping Superlattices by Ge Prism-Coupled THz Laser Radiation." IOP Conference Series: Materials Science and Engineering. 68 (2014): 012008.