Document Type
Article
Publication Date
5-15-1999
Abstract
Data from an earlier study [T. Vogel et al., Appl. Opt. 31, 329 (1992)] on the subnanosecond switching of 119-μm radiation in high-resistivity silicon by pulsed UV laser radiation, is compared with a refined one-dimensional numerical multilayer model accounting for the generation, recombination, and diffusion of the free carriers on the resulting far-infrared optical properties of the silicon. The inclusion of recent measurements for carrier-density and temperature-dependent transport parameters leads to improved agreement between experiment and theory.
Recommended Citation
Wilson TE. Modeling the high-speed switching of far-infrared radiation by photoionization in a semiconductor. Phys Rev B. 1999; 59(20): 12996–13002.
Comments
This article first appeared in the May 1999 issue of Physical Review B, the member magazine of the American Physical Society, and is reprinted with permission.
The publisher’s version of record is available at http://prb.aps.org/abstract/PRB/v59/i20/p12996_1
©1999 The American Physical Society. All rights reserved.