Data from an earlier study [T. Vogel et al., Appl. Opt. 31, 329 (1992)] on the subnanosecond switching of 119-μm radiation in high-resistivity silicon by pulsed UV laser radiation, is compared with a refined one-dimensional numerical multilayer model accounting for the generation, recombination, and diffusion of the free carriers on the resulting far-infrared optical properties of the silicon. The inclusion of recent measurements for carrier-density and temperature-dependent transport parameters leads to improved agreement between experiment and theory.
Wilson TE. Modeling the high-speed switching of far-infrared radiation by photoionization in a semiconductor. Phys Rev B. 1999; 59(20): 12996–13002.